CRAM — Defiance China Memory ETF

CRAM Fund Overview

CRAM — Defiance China Memory ETF is a US ETF managed by Tidal Trust V, categorised as China Blend / Core Equity. ABC INVEST provides holdings, performance, costs, cashflows, risk data, prospectus documents and SEC filings, sourced from SEC filings.

• Type: US ETF
• Manager: Tidal Trust V
• Category: China Blend / Core Equity
• Ticker: CRAM
• SEC CIK: 0002081107
• SEC series ID: S000108227
• Share class ID: C000279205

CRAM Investment Objective and Strategy

Defiance China Memory ETF describes its objective and strategy as follows, from its latest prospectus filed with the SEC by Tidal Trust V.

Investment objective

Defiance China Memory ETF (the “Fund”) seeks to track the performance, before fees and expenses, of the BITA China Memory Index (the “Index”).

Principal investment strategy

Overview The Fund uses a “passive management” (or indexing) approach to seek to track the performance, before fees and expenses, of the Index. The Index is constructed using a rules-based methodology that identifies publicly listed companies economically tied to China that derive significant revenue from the China memory and storage semiconductor value chain, as classified by BITA GmbH (the “Index Provider”). Index Overview The Index is designed to track the performance of companies listed on exchanges in mainland China and Hong Kong that are principally engaged in the China memory and storage semiconductor value chain. To be eligible for inclusion, a company must derive at least 50% of its total revenue from at least one of the thematic China memory and storage semiconductor value chain activities listed below, or alternatively, derive at least 25% of its total revenue from five (or more) categories of the thematic value chain activities described below and rank within the top five companies by absolute revenue from thematic value chain activities.

Revenue sources considered in determining eligibility, based on the above criteria, must be derived from the following China memory and storage semiconductor value chain activities: ● Dynamic Random-Access Memory (“DRAM”); ● NOT AND (“NAND”) Flash; ● NOT OR (“NOR”) Flash; ● Static Random-Access Memory (“SRAM”) and Niche Memory; ● Memory Modules and Solid-State Storage; ● Memory Interface and Buffer Chips; ● Storage and Flash Controllers; ● Memory Foundry; ● Memory Packaging and Testing; ● Memory Branding and Distribution; and/or ● Enabling Equipment, Materials, and Intellectual Property. The Index includes only ordinary shares of companies which are listed on exchanges in mainland China and Hong Kong. To qualify for initial inclusion, a company generally must have: (i) a free-float percentage of at least 10%; (ii) a market capitalization of at least $100 million; (iii) a three-month average daily trading value of at leas

CRAM Costs and Fees

CRAM costs about $67 per $10,000 invested per year in fund expenses.

• Net expense ratio: 0.67%
• Gross expense ratio: 0.67%

CRAM Debt Constituents

No individual debt constituents are reported in Defiance China Memory ETF's latest SEC N-PORT filing.

CRAM Prospectus and SEC Filings

Official Defiance China Memory ETF filings on SEC EDGAR — prospectus, portfolio holdings and annual reports.

• Prospectus (485BPOS) — filed 2026-08-28

Related Funds

Other China Blend / Core Equity funds tracked on ABC INVEST:

• Fiera Capital Emerging Markets Fund (RIMIX)
• 2ndVote Society Defended ETF (EGIS)
• Infusive® Compounding Global Equities ETF (JOYY)
• Clough China Fund (CHNAX)
• Franklin FTSE Hong Kong ETF (FLHK)

Data Sources

ABC INVEST compiles this page from public filings made to the U.S. Securities and Exchange Commission (SEC) through EDGAR: portfolio holdings and monthly cashflows from Form N-PORT, expenses and returns from fund prospectuses (Form 485BPOS) and the SEC DERA Risk/Return Summary data sets, annual data from Form N-CEN, and shareholder reports from Form N-CSR.